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 PMEG3010EH_EJ_ET_4 ? NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 20 March 2007 3 of 11 NXP Semiconductors PMEG3010EH/EJ/ET 1 A very low VF MEGA Schottky barrier recti?ers 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 30 V IF forward current Tsp ≤ 55 °C-1A IFRM repetitive peak forward current tp ≤ 1 ms; δ≤0.25 PMEG3010EH - 7 A PMEG3010EJ - 7 A PMEG3010ET - 5 A IFSM non-repetitive peak forward current square wave; tp =8ms -9A Ptot total power dissipation Tamb ≤25 °C PMEG3010EH [1] - 375 mW [2] - 830 mW PMEG3010EJ [1] - 350 mW [2] - 830 mW PMEG3010ET [1] - 280 mW [2] - 420 mW Tj junction temperature - 150 °C Tamb ambient temperature ?65 +150 °C Tstg storage temperature ?65 +150 °C |